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Search Results: Records 1-6 displayed on this page of 6
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Journal Articles

Organic solvent-free water-developable sugar resist material derived from biomass in green lithography

Takei, Satoshi*; Oshima, Akihiro*; Ichikawa, Takumi*; Sekiguchi, Atsushi*; Kashiwakura, Miki*; Kozawa, Takahiro*; Tagawa, Seiichi*; Oyama, Tomoko; Ito, Shoji*; Miyasaka, Hiroshi*

Microelectronic Engineering, 122, p.70 - 76, 2014/06

https://doi.org/10.1016/j.mee.2014.02.026
 Times Cited Count：24 Percentile：76.82(Engineering, Electrical & Electronic)

Biomass-derived branched sugar resist material was developed for environmentally-friendly electron beam lithography (EBL). The developed resist enables organic solvent-free water-developable process. The resist performance was evaluated using 75 keV EBL system. Lines of 50-200 nm were fabricated with high sensitivity of 7 $$mu$$C/cm$$^{2}$$. The resist is developable in pure water at 23 $$^{circ}$$C for 60 s, and it has acceptable CF$$_{4}$$ etch selectivity.

Journal Articles

Ge diffusion and bonding state change in metal/high-$$k$$/Ge gate stacks and its impact on electrical properties

Hosoi, Takuji*; Hideshima, Iori*; Tanaka, Ryohei*; Minoura, Yuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Shimura, Takayoshi*; Watanabe, Heiji*

Microelectronic Engineering, 109, p.137 - 141, 2013/09

https://doi.org/10.1016/j.mee.2013.03.115
 Times Cited Count：12 Percentile：54.28(Engineering, Electrical & Electronic)

Journal Articles

Electroforming of Ni mold for imprint lithography using high-aspect-ratio PMMA microstructures fabricated by proton beam writing

Tanabe, Yusuke*; Nishikawa, Hiroyuki*; Seki, Yoshihiro*; Sato, Takahiro; Ishii, Yasuyuki; Kamiya, Tomihiro; Watanabe, Toru*; Sekiguchi, Atsushi*

Microelectronic Engineering, 88(8), p.2145 - 2148, 2011/08

https://doi.org/10.1016/j.mee.2011.01.019
 Times Cited Count：9 Percentile：47.34(Engineering, Electrical & Electronic)

Journal Articles

Soft-lithographic methods for the fabrication of dielectrophoretic devices using molds by proton beam writing

Shiine, Yasuharu*; Nishikawa, Hiroyuki*; Furuta, Yusuke*; Kanamitsu, Kaoru*; Sato, Takahiro; Ishii, Yasuyuki; Kamiya, Tomihiro; Nakao, Ryota*; Uchida, Satoshi*

Microelectronic Engineering, 87(5-8), p.835 - 838, 2010/05

https://doi.org/10.1016/j.mee.2009.12.071
 Times Cited Count：7 Percentile：42.49(Engineering, Electrical & Electronic)

Journal Articles

Mechanisms of reduction in hole concentration in Al-doped 4H-SiC by electron irradiation

Matsuura, Hideharu*; Kagamihara, So*; Ito, Yuji*; Oshima, Takeshi; Ito, Hisayoshi

Microelectronic Engineering, 83(1), p.17 - 19, 2006/01

https://doi.org/10.1016/j.mee.2005.10.015
 Times Cited Count：3 Percentile：24.47(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Defect-engineering in SiC by ion implantation and electron irradiation

Pensl, G.*; Ciobanu, F.*; Frank, T.*; Kirmse, D.*; Krieger, M.*; Reshanov, S.*; Schmid, F.*; Weidner, M.*; Oshima, Takeshi; Ito, Hisayoshi; et al.

Microelectronic Engineering, 83(1), p.146 - 149, 2006/01

https://doi.org/10.1016/j.mee.2005.10.040
 Times Cited Count：15 Percentile：59.32(Engineering, Electrical & Electronic)

no abstracts in English

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